Simulation of Resistance Modulation in MOSFETs

المؤلفون

  • Mohammed A. Abdala College of Information Engineering, Al-Nahrain University, Baghdad, Iraq مؤلف

الكلمات المفتاحية:

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الملخص

Simulation results for the resistance modulation in metal-semiconductor field effect transistors (MOSFETs) are presented. The numerical simulations show that the resistance fluctuation does increase as the trap area is reduced, passes through a maximum and finally decrease towards zero. The comparison of the simulated results with typical experimental Random Telegraph Signal (RTS) data shows an overall good agreement.

التنزيلات

Key Dates

منشور

2007-09-01

إصدار

مجلد 11 عدد 2 (2007): Journal of Engineering and Development

القسم

Articles

الرخصة

Creative Commons License

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Creative Commons-Attribution (BY)

كيفية الاقتباس

Simulation of Resistance Modulation in MOSFETs. (2007). مجلة الهندسة والتنمية المستدامة, 11(2), 176-187. https://jeasd.uomustansiriyah.edu.iq/index.php/jeasd/article/view/1732