Simulation of Resistance Modulation in MOSFETs

Authors

  • Mohammed A. Abdala College of Information Engineering, Al-Nahrain University, Baghdad, Iraq Author

Keywords:

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Abstract

Simulation results for the resistance modulation in metal-semiconductor field effect transistors (MOSFETs) are presented. The numerical simulations show that the resistance fluctuation does increase as the trap area is reduced, passes through a maximum and finally decrease towards zero. The comparison of the simulated results with typical experimental Random Telegraph Signal (RTS) data shows an overall good agreement.

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Key Dates

Published

2007-09-01

Issue

Vol. 11 No. 2 (2007): Journal of Engineering and Development

Section

Articles

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Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The Journal of Engineering and Sustainable Development is an open-access journal that all contents are free of charge. Articles of this journal are licensed under the terms of the Creative Commons Attribution International Public License CC-BY 4.0 (https://creativecommons.org/licenses/by/4.0/legalcode) that licensees are unrestrictly allowed to search, download, share, distribute, print, or link to the full texts of the articles, crawl them for indexing and reproduce any medium of the articles provided that they give the author(s) proper credits (citation). The journal allows the author(s) to retain the copyright of their published article.
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How to Cite

Simulation of Resistance Modulation in MOSFETs. (2007). Journal of Engineering and Sustainable Development, 11(2), 176-187. https://jeasd.uomustansiriyah.edu.iq/index.php/jeasd/article/view/1732