Effect of Step Response for Semiconductor Laser

المؤلفون

  • Ayad Zwayen Mohammed Laser Engineering Department, University of Technology, Baghdad, Iraq مؤلف
  • Mousa Hadi Wali Electrical Engineering Department, College of Engineering, Al-Mustansiriyah University, Baghdad, Iraq مؤلف
  • Ahmed Mamoun Mahmoud Electrical Engineering Department, University of Selah-Alden , Erbil, Iraq مؤلف

الكلمات المفتاحية:

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الملخص

The behavior of the dynamics of semiconductor laser is investigated by simulation and solving numerically the laser rate equations for photon and carrier densities. The rate equations take into account various system parameters such as gain compression factor and carrier recombination mechanisms. The simulation results reviled a step power response and carrier density for various cavity length and facet reflectivity of semiconductor laser.

التنزيلات

Key Dates

منشور

2010-12-01

إصدار

مجلد 14 عدد 4 (2010): Journal of Engineering and Development

القسم

Articles

الرخصة

Creative Commons License

هذا العمل مرخص بموجب Creative Commons Attribution 4.0 International License.

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Creative Commons-Attribution (BY)

كيفية الاقتباس

Effect of Step Response for Semiconductor Laser. (2010). مجلة الهندسة والتنمية المستدامة, 14(4), 79-92. https://jeasd.uomustansiriyah.edu.iq/index.php/jeasd/article/view/1412